Ngwa SiC
Nkọwa
Silicon carbide (SiC) bụ ọnụọgụ ọnụọgụ abụọ nke Group IV-IV, ọ bụ naanị ogige siri ike siri ike na Group IV nke tebụl oge, Ọ bụ semiconductor dị mkpa.SiC nwere ezigbo thermal, igwe, kemịkalụ na eletriki, nke na-eme ka ọ bụrụ otu n'ime ihe kachasị mma maka imepụta ngwa elektrọnik dị elu, ugboro ugboro na ike dị elu, SiC nwekwara ike iji dị ka ihe mkpụrụ. maka diode ọkụ na-acha anụnụ anụnụ dabere na GaN.Ka ọ dị ugbu a, 4H-SiC bụ ngwaahịa kachasị na ahịa, a na-ekewa ụdị conductivity n'ime ụdị mkpuchi nke ọkara na ụdị N.
Njirimara
| Ihe | 2 inch 4H N-ụdị | ||
| Dayameta | 2 anụ ọhịa (50.8mm) | ||
| Ọkpụrụkpụ | 350+/-25um | ||
| Nhazi | gbanyụọ axis 4.0˚ n'ebe <1120> ± 0.5˚ | ||
| Nhazi Flat nke izizi | <1-100> ± 5° | ||
| Ụlọ elu nke abụọ Nhazi | 90.0˚ CW sitere na Primary Flat ± 5.0˚, Si ihu elu | ||
| Ogologo Flat nke izizi | 16 ± 2.0 | ||
| Ogologo Flat nke abụọ | 8 ± 2.0 | ||
| Ọkwa | Ọkwa mmepụta (P) | Ọkwa nyocha (R) | Ngụsị akwụkwọ (D) |
| Nguzogide | 0.015 ~ 0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Njupụta Micropipe | ≤ 1 micropipe / cm² | ≤ 1 0 micropipes/cm² | ≤ 30 micropipe / cm² |
| Ọdịdị dị n'elu | Na ihu CMP Ra <0.5nm, C Face Ra <1 nm | N/A, mpaghara eji eme ihe> 75% | |
| TTV | <8 nke | <10um | <15 nke |
| Ụta | < 8 um | < 10um | < 15um |
| Warp | <15 nke | <20 um | <25 nke |
| Mgbawa | Ọ dịghị | Ogologo ngụkọta ≤ 3 mm | Mgbakọ ogologo ≤10mm, |
| Ọkpụkpụ | ≤ 3 nkọcha, mkpokọta | ≤ 5 ncha, nchikota | ≤ 10 nkọcha, mkpokọta |
| Efere Hex | kacha 6 efere, | kacha 12 efere, | N/A, mpaghara eji eme ihe> 75% |
| Mpaghara Polytype | Ọ dịghị | Mpaghara mkpokọta ≤ 5% | Mpaghara mkpokọta ≤ 10% |
| Mmetọ | Ọ dịghị | ||
